november 2013 ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA50N100BNTD rev. c1 FGA50N100BNTD ? 1000 v npt trench igbt FGA50N100BNTD 1000 v npt trench igbt general description using fairchild's proprieta ry trench design and advanced npt technology, the 1000v np t igbt offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. this device offers the optimum performance for hard switching application such as ups, welder applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5 v @ i c = 60 a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 ? c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description ratings unit v ces collector-emitter voltage 1000 v v ges gate-emitter voltage ? 25 v i c collector current @ t c = 25 ? c50 a collector current @ t c = 100 ? c35 a i cm (1) pulsed collector current 100 a i f diode continuous forward current @ t c = 25 ? c30 a diode continuous forward current @ t c = 100 ? c15 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 ? c 156 w maximum power dissipation @ t c = 100 ? c63 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 ? c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 0.8 ? c / w r ? jc (diode) thermal resistance, junction-to-case -- 2.4 ? c / w r ? ja thermal resistance, junction-to-ambient -- 25 ? c / w application ups, welder, induction heating, microwave oven g c e g c e g c e to-3p
?2006 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD ? 1000 v npt trench igbt package marking and ordering information electrical characteristics of igbt t c = 25 ? c unless otherwise noted electrical characteristics of diode t c = 25 ? c unless otherwise noted part number top mark package packing method reel size tape width quantity FGA50N100BNTDtu FGA50N100BNTD to-3p rail / tube n/a n/a 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector emitter breakdown voltage v ge = 0 v, i c = 1 ma 1000 -- -- v i ces collector cut-off current v ce = 1000 v, v ge = 0 v -- -- 1.0 ma i ges g-e leakage current v ge = 25 v, v ce = 0 v -- -- 500 na on characteristics v ge(th) g-e threshold voltage i c = 60 ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10 a , v ge = 15 v -- 1.5 1.8 v i c = 60 a , v ge = 15 v -- 2.5 2.9 v dynamic characteristics c ies input capacitance v ce =10 v , v ge = 0 v, f = 1 mhz -- 6000 -- pf c oes output capacitance -- 260 -- pf c res reverse transfer capacitance -- 200 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60 a, r g = 51 ? , v ge =15 v, resistive load, t c = 25 ? c -- 140 -- ns t r rise time -- 320 -- ns t d(off) turn-off delay time -- 630 -- ns t f fall time -- 130 250 ns q g total gate charge v ce = 600 v, i c = 60 a, v ge = 15 v , , t c = 25 ? c -- 275 350 nc q ge gate-emitter charge -- 45 -- nc q gc gate-collector charge -- 95 -- nc symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 15 a -- 1.2 1.7 v i f = 60 a -- 1.8 2.1 v t rr diode reverse recovery time i f = 60 a di f /dt = 20 a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 1000 v -- 0.05 2 ua
?2006 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA50N100BNTD rev. c1 FGA50N100BNTD ? 1000 v npt trench igbt 012345 0 20 40 60 80 100 20v 15v 10v 9v 8v 7v v ge = 6v common emitter t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v tc = 25 o c tc = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = - 40 o c i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 25 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 125 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 4. saturation voltage vs. v ge fig 3. saturation voltage vs. case temperature at varient current level fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
?2006 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA50N100BNTD rev. c1 FGA50N100BNTD ? 1000 v npt trench igbt 0 5 10 15 20 25 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge = +/-15v t c =25 o c tdoff tdon tr tf switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 100 1000 v cc =600v, rg=51 ? v ge =+/-15v, t c =25 o c tdon tr tf tdoff switching time [ns] collector current, i c [a ] 0 50 100 150 200 250 300 0 5 10 15 20 common emitter v cc =600v, r l =10 ? t c =25 o c gate-emitter voltage,v ge [v] gate charge, q g [nc] fig 7. capacitance characteristics fig 8. switching characteristics vs. gate resistance fig 9. switching ch aracteristics vs. collector current fig 10. gate charge characteristics fig 11. soa characteristics fig 12. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 rectangul ar pul se durati on [sec] thermal response [zthjc] 0.5 0.2 0.1 0.05 0. 02 0.01 si ngl e pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 ? s 100 ? s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v]
?2006 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA50N100BNTD rev. c1 FGA50N100BNTD ? 1000 v npt trench igbt fig 17. junction capacitance 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 o c t c = 100 o c forward voltage, v f [v] forward current, i f [a] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f = 60 a t c = 25 o c di/dt [a/us] reverse recovery time, t rr [us] 0 20 40 60 80 100 120 reverse recovery current i rr [a] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [us] 4 6 8 10 12 di/dt=-20a/us t c =25 o c reverse recovery current i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 o c t c = 25 o c reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 o c capacitance, c j [pf] reverse voltage, v r [v] fig 14. reverse recovery characteristics vs. di f /dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage
?2006 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA50N100BNTD rev. c1 FGA50N100BNTD ? 1000 v npt trench igbt mechanical dimensions figure 18. to-3p 3l - 3ld, t03, plastic, eiaj sc-65 package drawings are provided as a service to customers considering fairchil d components. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, wh ich covers fairchild products. always visit fairchild semiconductor?s online pack aging area for the most recent package drawings: http://www.fairchildsemi.com/package/pa ckagedetails.html?id=pn_tt3p0-003
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